HY27SA161G1M Hynix Semiconductor, HY27SA161G1M Datasheet - Page 32

• Manufacturer Part Number: HY27SA161G1M
• Description: 1gbit 128mx8bit / 64mx16bit Nand Flash Memory
• Manufacturer: Hynix Semiconductor

WE
CLE
RE
I/O
CE
Note:1. CLE = Low, ALE = Low, WE = High.
Rev 0.5 / Oct. 2004
I/O
RB
CE
RE
(RE Accesstime)
tBHRL
tCLHWL
(Data Setup time)
tRLQV
(RE High Holdtime)
Figure 24. Sequential Data Output after Read AC Waveforms
tELWL
tDVWH
Figure 25. Read Status Register AC Waveform
(Read Cycle time)
Data Out
tRHRL
tRLRL
tRLQV
70h
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
tWLWH
tWHDX
(Data Hold time)
tWHCLL
tWHEH
Data Out
tRHQZ
tWHRL
tDZRL
tCLLRL
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
tELQV
tRLQV
Status Register
tRLQV
Data Out
tRHQZ
tEHQZ
tEHQZ
Output
tRHQZ
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