HY27SA161G1M Hynix Semiconductor, HY27SA161G1M Datasheet - Page 27

• Manufacturer Part Number: HY27SA161G1M
• Description: 1gbit 128mx8bit / 64mx16bit Nand Flash Memory
• Manufacturer: Hynix Semiconductor

Table 13: DC Characteristics, 3.3V Device and 1.8V Device
Rev 0.5 / Oct. 2004
Symbol
I
OL
V
I
I
I
I
I
V
V
V
I
V
CC1
CC2
CC3
CC4
CC5
I
LKO
LO
(RB)
OH
LI
OL
IH
IL
Operating
Current
Stand-by Current (TTL)
Stand-By Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (RB)
V
(Erase and Program lockout)
DD
Supply Voltage
Parameter
Sequential Read
Program
Erase
V
V
CE=V
CE=V
CC
CE=V
CC
t
V
V
I
I
V
RLRL
OH
OL
Test Condition
IN
OUT
OL
= 0 to V
= 2.1mA
= -400uA
= 0.1V
= 0 to V
IL
minimum
IH
CC
, I
, WP=0V/
-0.2, WP=0/
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
OUT
-
-
-
-
-
CC
= 0 mA
CC
max
max
Min
-0.3
2.0
2.4
8
-
-
-
-
-
-
-
-
-
Typ
3.3V
15
15
15
20
10
-
-
-
-
-
-
-
-
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
V
CC
Max
· 20
· 20
100
0.8
0.4
2.5
30
30
30
1
+0.3
-
-
V
V
CC
CC
Min
-0.3
+0.4
3
-
-
-
-
-
-
-
-
-
-0.1
1.8V
Typ
10
10
10
20
4
-
-
-
-
-
-
V
CC
· 20
· 20
Max
100
0.4
0.1
1.5
20
20
20
1
+0.3
-
-
27
Unit
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
V