APT100GT60JRDL Microsemi Corporation, APT100GT60JRDL Datasheet - Page 9

• Manufacturer Part Number: APT100GT60JRDL
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 80
• Manufacturer: Microsemi Corporation

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
1
4
5
2
3
r = 4.0 (.157)
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
(2 places)
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
current goes from positive to negative, to the point at which the straight
line through I
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
7.8 (.307)
8.2 (.322)
RRM
Figure 33, Diode Reverse Recovery Waveform and Defi nitions
SOT-227 (ISOTOP
passes through zero.
Dimensions in Millimeters and (Inches )
RRM
Figure 32, Diode Test Circuit
and t rr .
di
* Emitter/Anode
* Emitter/Anode
3.3 (.129)
3.6 (.143)
F
/dt Adjust
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
®
) Package Outline
30μH
Zero
V r
APT10035LLL
1
1.95 (.077)
2.14 (.084)
TRANSFORMER
PEARSON 2878
CURRENT
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
0.75 (.030)
0.85 (.033)
2
D.U.T.
Collector/Cathode
Gate
Hex Nut M4
*
(4 places)
Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
12.6 (.496)
12.8 (.504)
3
4
5
25.2 (0.992)
25.4 (1.000)
t rr / Q rr
Waveform
APT100GT60JRDL
0.25 I RRM