APT100GT60JRDL Microsemi Corporation, APT100GT60JRDL Datasheet - Page 5

• Manufacturer Part Number: APT100GT60JRDL
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 80
• Manufacturer: Microsemi Corporation

Typical Performance Curves
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
0.30
0.25
0.20
0.15
0.10
0.05
500
100
100
Figure 20, Operating Frequency vs Collector Current
V
50
10
0
CE
5
1
10
0
10 20
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
T
D = 50 %
V
R
-5
J
CE
G
= 125
= 4.3Ω
= 400V
I
10
°
C
C
30 40
, COLLECTOR CURRENT (A)
0.9
0.5
0.05
0.7
0.3
0.1
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
T
20
C
10
= 100
50
-4
°
C
60
T
30
C
= 75
70 80
°
C
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
90 100
ies
0es
res
10
SINGLE PULSE
-3
50
F
f
f
P
max1
max2
max
diss
=
= min (f
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
10
+ t
max
- P
+ E
C
-2
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
350
300
250
200
150
100
Figure 18,Minimim Switching Safe Operating Area
50
f
0
0
V
10
CE
-1
100
, COLLECTOR TO EMITTER VOLTAGE
200
Note:
Peak T J = P DM x Z θJC + T C
300
Duty Factor D =
1.0
400
t 1
t 2
500
APT100GT60JRDL
t 1
/
t 2
600
700
10