APT100GT60JRDL Microsemi Corporation, APT100GT60JRDL Datasheet

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APT100GT60JRDL

Manufacturer Part Number
APT100GT60JRDL
Description
Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 80;
Manufacturer
Microsemi Corporation
Datasheet
The Thunderbolt IGBT
of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun-
derbolt IGBT
Features
• Low Forward Voltage Drop
• Low Tail Current
• Integrated Gate Resistor
Low EMI, High Reliability
• Low forward Diode Voltage (V
• RoHS Compliant
Maximum Ratings
Static Electrical Characteristics
Symbol Parameter
Symbol Characteristic / Test Conditions
T
V
V
V
SSOA
J
V
(BR)CES
V
, T
GE(TH)
CE(ON)
I
I
I
P
I
I
CES
GES
CM
CES
C1
C2
GE
D
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
®
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector Emitter On Voltage (V
Collector Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
offers superior ruggedness and ultrafast switching speed.
Resonant Mode Combi IGBT
®
used in this Resonant Mode Combi is a new generation
• Ultra soft recovery diode
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
F
)
1
CE
CE
CE
Microsemi Website - http://www.microsemi.com
= V
= 600V, V
= 600V, V
GE
GE
GE
GE
= 15V, I
= 15V, I
C
C
, I
= 100°C
= 25°C
J
= ±30V)
= 150°C
C
= 2.0mA, T
GE
GE
GE
C
C
= 0V, T
= 0V, T
= 0V, I
= 100A, T
= 100A, T
C
j
j
j
= 25°C)
= 25°C)
= 125°C)
= 4mA)
j
j
= 25°C)
= 125°C)
2
All Ratings: T
2
®
Typical Applications
• ZVS Phase Shifted Bridge
• Resonant Mode Switching
• Phase Shifted Bridge
• Welding
• Induction heating
• High Frequency SMPS
C
= 25°C unless otherwise specifi ed.
600V, 100A, V
APT100GT60JRDL
Min
600
1.7
3
-
-
-
-
300A @ 600V
-55 to 150
Ratings
600
±30
148
300
500
80
Typ
2.1
2.5
4
-
-
-
-
CE(ON)
ISOTOP
.
1500
Max
300
2.5
= 2.1V Typical
75
G
5
-
-
®
"UL Recognized"
file # E145592
Amps
Watts
Unit
Volts
°C
Unit
Volts
μA
nA
C
E

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APT100GT60JRDL Summary of contents

Page 1

... 25° 600V 0V 125° ±30V) GE Microsemi Website - http://www.microsemi.com APT100GT60JRDL 600V, 100A 2.1V Typical CE(ON) "UL Recognized" file # E145592 ISOTOP ® 25°C unless otherwise specifi ed. C Ratings Unit 600 Volts ±30 148 ...

Page 2

... Inductive Switching (25° 400V 15V 100A 4.3Ω +25° Inductive Switching (125° 400V 15V 100A 4.3Ω +125° APT100GT60JRDL Min Typ Max - 5150 - - 475 - - 295 - - 8 460 - - 210 - = 15V, GE 300 - 320 - - ...

Page 3

... J FIGURE 7, Threshold Voltage vs. Junction Temperature 2 15V 25°C. J 250µs PULSE TEST <0.5 % DUTY CYCLE = 50A 100 125 150 APT100GT60JRDL 300 12, 13, &15V 10V 250 9V 200 8V 150 100 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (T = 125° ...

Page 4

... GE 12000 10000 = 25°C 16000 E 200A on2, 14000 12000 10000 100A on2, E 100A off, E 50A off FIGURE 16, Switching Energy Losses vs Junction Temperature APT100GT60JRDL 450 400 350 300 V =15V,T =25° =15V,T =125° 250 200 150 100 = V 400V 4.3Ω ...

Page 5

... diss cond f = max2 on2 off diss R θ 100 APT100GT60JRDL 100 200 300 400 500 600 700 V , COLLECTOR TO EMITTER VOLTAGE CE Figure 18,Minimim Switching Safe Operating Area Note Duty Factor D = Peak θ ...

Page 6

... Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) CollectorVoltage 90 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Defi nitions Figure 22, Turn-on Switching Waveforms and Defi nitions T = 125° APT100GT60JRDL Gate Voltage 10% t d(on 90% Collector Current 5% 5% 10% CollectorVoltage Switching Energy T = 125°C J ...

Page 7

... 400V 125° 100A, di /dt = -1000A/µ 400V 125° RECTANGULAR PULSE DURATION (seconds) APT100GT60JRDL = 25°C unless otherwise specifi ed. C APT100GT60JRDL 100 300 600 Min Type Max 1.6 - 2.1 2.0 1.25 Min Typ Max 110 - - 487 - - 2328 - - - ...

Page 8

... FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 400 350 300 250 200 150 100 100 125 150 FIGURE 7, Maximum Average Forward Current vs. Case Temperature 100 400 APT100GT60JRDL T = 125° 400V R 100A 50A 200A 0 0 200 400 600 800 ...

Page 9

... Figure 33, Diode Reverse Recovery Waveform and Defi nitions ® SOT-227 (ISOTOP ) Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches ) APT100GT60JRDL D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 0.25 I RRM 3 2 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) ...

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