APT100GT60JRDL Microsemi Corporation, APT100GT60JRDL Datasheet - Page 3

• Manufacturer Part Number: APT100GT60JRDL
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 80
• Manufacturer: Microsemi Corporation

Typical Performance Curves
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
200
180
160
140
120
100
200
180
160
140
120
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
80
60
40
20
0
0
0
FIGURE 1, Output Characteristics(V
-50 -25
V
0
0
6
CE
V
GE
TEST<0.5 % DUTY
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
0.5
250µs PULSE
GE
T
= 15V
J
T
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
, GATE-TO-EMITTER VOLTAGE (V)
C
8
T
T
T
2
= -55°C
C
C
C
1
0
= 125 ° C
= 25°C
= 125 ° C
T
C
= 25°C
1.5
25
I
10
4
C
= 200A
I
C
50
T
2
J
= 100A
I
C
= -55°C
12
= 50A
6
2.5
75
<0.5 % DUTY CYCLE
250µs PULSE TEST
T
100 125 150
3
J
= 25°C.
14
8
GE
3.5
= 15V)
10
16
4
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
300
250
200
150
100
200
180
160
140
120
100
3.5
2.5
1.5
0.5
50
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
4
3
2
1
0
0
-50 -25
V
0
0
0
CE
V
T
I
PULSE TEST <0.5 %
C
GE
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 100A
= 25°C
= 15V.
DUTY CYCLE
25
5
100
T
I
T
C
C
J
10V
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
= 100A
FIGURE 4, Gate Charge
0
V
GATE CHARGE (nC)
250µs
10
50
CE
V
9V
12, 13, &15V
25
200
CE
= 300V
= 120V
I
15
C
75
50
= 200A
8V
I
C
300
= 50A
75 100 125 150
100
20
V
7V
CE
APT100GT60JRDL
400
= 480V
125
25
J
6V
= 125°C)
500
150
30