BFR840L3RHESD Infineon Technologies, BFR840L3RHESD Datasheet - Page 9

• Manufacturer Part Number: BFR840L3RHESD
• Manufacturer: Infineon Technologies

Specifications of BFR840L3RHESD

• Packages: TSLP-3-9
• Vceo (max): 2.25 V
• Ic(max): 35.0 mA
• Nfmin (typ): -
• Gmax (typ): -
• Oip3: -

3
Table 1
Parameter
Collector emitter voltage
Collector emitter voltage
Collector emitter voltage
Base current
Collector current
RF input power
ESD stress pulse
Total power dissipation
Junction temperature
Storage temperature
1)
2)
3)
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Data Sheet
V
V
T
S
CES
CBO
is the soldering point temperature. T
is identical to
is similar to
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Maximum Ratings
Maximum Ratings at
V
V
CEO
CEO
3)
due to design
1)
2)
due to design
Symbol
V
V
V
I
I
P
V
P
T
T
B
C
T
J
Stg
CEO
CES
CB0
RFin
ESD
tot
A
= 25°C (unless otherwise specified)
S
measured on the emitter lead at the soldering point of the pcb.
Min.
–
–
–
-5
–
–
-1.5
–
–
-55
9
Values
Max.
2.25
2.0
2.25
2.0
2.9
2.6
3
35
tbd
1.5
75
150
150
Unit
V
V
V
mA
mA
dBm
kV
mW
°C
°C
Note / Test Condition
25°C
-55°C
Open base
25°C
-55°C
E-B short circuited
25°C
-55°C
Open emitter
–
–
–
HBM, all pins, acc. to
JESD22-A114
T
–
–
Revision 1.0, 2012-04-19
S
≤ 111 °C
BFR840L3RHESD
Maximum Ratings