BFR840L3RHESD Infineon Technologies, BFR840L3RHESD Datasheet - Page 12

• Manufacturer Part Number: BFR840L3RHESD
• Manufacturer: Infineon Technologies

Specifications of BFR840L3RHESD

• Packages: TSLP-3-9
• Vceo (max): 2.25 V
• Ic(max): 35.0 mA
• Nfmin (typ): -
• Gmax (typ): -
• Oip3: -

5.3
Measurement setup is a test fixture with Bias T’s in a 50 Ω system,
Figure 2
Table 5
Parameter
Power gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
Table 6
Parameter
Power gain
Maximum power gain
Transducer gain
Data Sheet
In
Frequency Dependent AC Characteristics
BFR840L3RHESD Testing Circuit
AC Characteristics,
AC Characteristics,
Bias -T
VB
V
V
CE
CE
= 1.8 V,
= 1.8 V,
Symbol
G
|
NF
G
OP
OIP
Symbol
G
|
S
S
ms
ass
ms
21
21
min
1dB
|
|
2
3
2
f
f
1
RF-
In
= 0.45 GHz
= 0.9 GHz
GND
Min.
–
–
–
–
–
–
Min.
–
–
RF-
Out
12
3
2
Typ.
31
27
0.5
27
4
19.5
Typ.
29
26.5
Values
Values
T
A
= 25 °C
–
–
–
–
–
–
–
–
Max.
Max.
TSLP-3-9 testing circuit
Bias -T
VC
Unit
dB
dB
dBm
Unit
dB
Electrical Characteristics
Revision 1.0, 2012-04-19
Note / Test Condition
I
I
I
I
Z
I
I
Note / Test Condition
I
I
BFR840L3RHESD
C
C
C
C
C
C
C
C
S
= 10 mA
= 10 mA
= 5 mA
= 5 mA
= 10 mA
= 10 mA
= 10 mA
= 10 mA
=
Z
L
= 50 Ω
Out