BFR840L3RHESD Infineon Technologies, BFR840L3RHESD Datasheet - Page 11

• Manufacturer Part Number: BFR840L3RHESD
• Manufacturer: Infineon Technologies

Specifications of BFR840L3RHESD

• Packages: TSLP-3-9
• Vceo (max): 2.25 V
• Ic(max): 35.0 mA
• Nfmin (typ): -
• Gmax (typ): -
• Oip3: -

5
5.1
Table 3
Parameter
Collector emitter breakdown voltage
Collector emitter leakage current
Collector base leakage current
Emitter base leakage current
DC current gain
5.2
Table 4
Parameter
Transition frequency
Collector base capacitance
Collector emitter capacitance
Emitter base capacitance
Data Sheet
Electrical Characteristics
DC Characteristics
DC Characteristics at
General AC Characteristics
General AC Characteristics at
T
A
= 25 °C
Symbol
V
I
I
I
h
Symbol
f
C
C
C
T
CES
CBO
EBO
FE
(BR)CEO
CB
CE
EB
T
A
= 25 °C
Min.
2.25
–
–
–
150
Min.
–
–
–
–
11
Typ.
2.6
–
–
–
260
Typ.
75
52
0.34
0.34
Values
Values
Max.
–
400
400
10
450
Max.
–
–
–
–
Unit
V
nA
nA
μA
Unit
GHz
fF
pF
pF
Electrical Characteristics
Note / Test Condition
I
Open base
V
E - B short circuited
V
Open emitter
V
Open collector
V
Pulse measured
Note / Test Condition
V
f
V
f
Emitter grounded
V
f
Base grounded
V
f
Collector grounded
Revision 1.0, 2012-04-19
C
= 2 GHz
= 1 MHz
= 1 MHz
= 1 MHz
CE
CB
EB
CE
CE
CB
CE
EB
= 1 mA,
BFR840L3RHESD
= 0.5 V,
= 0.4 V,
= 1.5 V,
= 1.5 V,
= 1.8 V,
= 1.8 V,
= 1.8 V,
= 1.8 V,
I
B
I
V
V
I
I
I
V
V
= 0
C
E
C
C
CB
BE
BE
BE
= 0
= 0
= 10 mA
= 25 mA
= 0
= 0
= 0
= 0