BSR316P Infineon Technologies, BSR316P Datasheet - Page 8

• Manufacturer Part Number: BSR316P
• Manufacturer: Infineon Technologies

Specifications of BSR316P

• Package: SC59
• Vds (max): -100.0 V
• Rds (on) (max) (@10v): 1,800.0 mOhm
• Rds (on) (max) (@4.5v): 2,200.0 mOhm
• Rds (on) (max) (@2.5v): -

Rev 1.05
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
120
115
110
105
100
95
90
AV
-1
-2
0
=f(T
10
-60
); R
0
j
GS
); I
j(start)
=25 W
D
-20
=-250 µA
10
20
1
t
T
AV
j
[°C]
[µs]
60
10
2
100
125 °C
100 °C
25 °C
140
10
page 8
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
10
V
V
9
8
7
6
5
4
3
2
1
0
g(th)
gs(th)
GS
0
gate
); I
DD
Q
D
=-0.36 A pulsed
gs
2
-Q
Q
gate
g
20 V
Q
50 V
[nC]
sw
80 V
Q
gd
4
BSR316P
2009-02-16
Q
gate
6