BSR316P Infineon Technologies, BSR316P Datasheet
BSR316P
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BSR316P Summary of contents
Page 1
... =25 °C D,pulse A = =-0. =25 °C tot stg JESD22-A114-HBM page 1 BSR316P -100 1.8 -0.36 PG-SC59 Marking Lead free Packing LC Yes Non dry Value Unit steady state -0.36 A -0.29 -1. ±20 V 0.5 W -55 ... 150 °C 1A (250V to 500V) 260 ° ...
Page 2
... =150 ° =- GSS =-4 DS(on) I =-0. =- =-0. |>2 DS(on)max =-0. page 2 Values min. typ. max 250 - - -100 - -10 -100 = -10 -100 - 1.8 2.2 - 1.3 1.8 , 0.3 0.5 - BSR316P Unit K/W V µ 2009-02-16 ...
Page 3
... plateau =25 ° S,pulse =0. =25 ° =- =| /dt =100 A/µ page 3 BSR316P Values Unit min. typ. max. - 124 165 106 - 0.3 0 1.6 2.4 - 5.3 7 ...
Page 4
... Max. transient thermal impedance Z =f(t thJC parameter 100 µ 100 [V] page 4 |≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p BSR316P 160 2009-02-16 ...
Page 5
... Typ. drain-source on resistance R =f(I DS(on) parameter 2.8 4 2.4 -3 1.8 1.6 -2.5 V 1.4 1 [V] 8 Typ. forward transconductance g =f 150 °C 0.8 25 °C 0.6 0.4 0 [V] page =25 ° -3 0.4 0 =25 °C j 0.0 0.2 0.4 -I [A] D BSR316P -4.5 V 1.2 1.6 0.6 2009-02-16 ...
Page 6
... Forward characteristics of reverse diode I =f parameter Ciss - Coss Crss 60 80 100 [V] page =-170 µ typ 2 % -60 - 100 T [° °C 150 °C 150 °C, 98% 25 °C, 98% 0 0.4 0.8 -V [V] SD BSR316P 140 1.2 1.6 2009-02-16 ...
Page 7
... Package Outline SC-59: Outline Footprint Packaging Tape Dimensions in mm Rev 1.05 page 7 BSR316P 2009-02-16 ...
Page 8
... V =f(Q GS parameter °C 8 100 ° 125 ° Gate charge waveforms V V gs(th) Q g(th) 60 100 140 page =-0.36 A pulsed gate [nC] gate BSR316P 6 Q gate 2009-02-16 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 1.05 page 9 BSR316P 2009-02-16 ...