BSR316P Infineon Technologies, BSR316P Datasheet - Page 3

• Manufacturer Part Number: BSR316P
• Manufacturer: Infineon Technologies

Specifications of BSR316P

• Package: SC59
• Vds (max): -100.0 V
• Rds (on) (max) (@10v): 1,800.0 mOhm
• Rds (on) (max) (@4.5v): 2,200.0 mOhm
• Rds (on) (max) (@2.5v): -

Rev 1.05
2)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
2)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
g
rr
V
f =1 MHz
V
V
I
V
I
10 V
T
V
T
V
di
D
D
C
j
GS
DD
GS
DD
GS
R
=-0.36 A, R
=-0.36 A, V
=25 °C
F
page 3
=25 °C
=-50 V, I
/dt =100 A/µs
=0 V, V
=-50 V,
=-10 V,
=-80 V,
=0 V, I
F
DS
=0.36 A,
F
=|I
GS
=-25 V,
G
=6 W
S
=0 to -
|,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
40.6
46.4
typ.
124
-2.7
-0.8
0.3
1.6
5.3
25
13
71
26
5
6
-
-
max.
-0.36
-1.44
-1.1
165
106
0.4
2.4
7.0
33
20
39
8
9
-
-
-
BSR316P
2009-02-16
Unit
pF
ns
nC
V
A
V
ns
nC