T3160N Infineon Technologies, T3160N Datasheet - Page 8

• Manufacturer Part Number: T3160N
• Manufacturer: Infineon Technologies

Specifications of T3160N

• Vdrm/ Vrrm (v): 1,200.0 - 1,800.0 V
• Itsm: 57,000.0 A
• Itavm: 3160 (180 ° el sin)
• Housing: Disc dia 111mm height 26mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

IFBIP D AEC / 2010-07-13, H.Sandmann
N
Phase Control Thyristor
100
100000
0,1
10
10000
1000
1
10
Netz-Thyristor
1
Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P
Steuercharakteristik v
Gate characteristic v
Sperrverzögerungsladung / Recovered charge Q
Datenblatt / Data sheet
a - 20W / 10ms
Parameter: Durchlassstrom / On-state current i
100
T
vj
= T
Steuerkennlinie
vjmax
Zündverzug
G
, v
G
= f (i
T3160N
= f (i
R
b - 40W / 1ms
≤ 0,5 V
G
A 20/10
G
) with triggering area for V
i
) mit Zündbereichen für V
G
[mA]
RRM
10
, V
RM
c - 60W / 0,5ms
= 0,8 V
RRM
1000
r
= f(di/dt)
TM
D
D
= 12 V
= 12 V
-di/dt [A/µs]
Seite/page
a
GM
= f (t
b
g
) :
i
5000A
2000A
1000A
TM
c
500A
200A
100A
10000
=
8/10
100