T3160N Infineon Technologies, T3160N Datasheet - Page 5

• Manufacturer Part Number: T3160N
• Manufacturer: Infineon Technologies

Specifications of T3160N

• Vdrm/ Vrrm (v): 1,200.0 - 1,800.0 V
• Itsm: 57,000.0 A
• Itavm: 3160 (180 ° el sin)
• Housing: Disc dia 111mm height 26mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

IFBIP D AEC / 2010-07-13, H.Sandmann
N
Phase Control Thyristor
Kühlung / Cooling
kathodenseitig
cathode-sided
anodenseitig
anode-sided
Netz-Thyristor
16000
14000
12000
10000
beidseitig
two-sided
Erhöhung des Z
8000
6000
4000
2000
Rise of Z
0
1
th DC
for sinewave and rectangular current with different current conduction angles Θ
th DC
Grenzdurchlasskennlinie / Limiting on-state characteristic i
∆Z
∆Z
∆Z
∆Z
∆Z
∆Z
1,2
[°C/W]
[°C/W]
[°C/W]
[°C/W]
[°C/W]
[°C/W]
bei Sinus und Rechteckströmen mit unterschiedlichen Stromflusswinkeln Θ
th Θ rec
th Θ rec
th Θ rec
th Θ sin
th Θ sin
th Θ sin
Datenblatt / Data sheet
Durchlasskennlinie
1,4
Θ = 180°
0,00084
0,00069
0,00143
0,00112
0,00170
0,00144
Z
Z
th Θ rec
th Θ sin
∆Z
T3160N
= Z
= Z
th Θ rec
T
vj
A 20/10
1,6
= T
th DC
th DC
v
Θ = 120°
0,00130
0,00093
0,00228
0,00154
0,00261
0,00191
T
/ ∆Z
vj max
[V]
+ Z
+ Z
th Θ sin
th Θ rec
th Θ sin
1,8
0,00161
0,00120
0,00288
0,00208
0,00322
0,00246
Θ = 90°
T
2
= f(v
T
0,00201
0,00156
0,00371
0,00289
0,00399
0,00321
Θ = 60°
)
T
vj
= T
Seite/page
vj max
2,2
0,00259
0,00208
0,00492
0,00425
0,00506
0,00430
Θ = 30°
5/10
2,4