CM900HG-90H Powerex Inc, CM900HG-90H Datasheet - Page 6

• Manufacturer Part Number: CM900HG-90H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM900HG-90H

• Prx Availability: RequestQuote
• Voltage: 4500V
• Current: 900A
• Circuit Configuration: Single
• Rohs Compliant: No

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
10
10
10
1.2
1.0
0.8
0.6
0.4
0.2
-1
0
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
10
10
-3
2
R
R
V
R
Inductive load
CC
th(j–c)Q
th(j–c)R
2 3 5 7
G
TRANSIENT THERMAL IMPEDANCE
= 10Ω, T
= 2250V, V
HALF-BRIDGE SWITCHING TIME
2
COLLECTOR CURRENT ( A )
= 22K/kW
= 11K/kW
3
10
-2
CHARACTERISTICS
CHARACTERISTICS
j
4
2 3 5 7
= 125°C
5
GE
( TYPICAL )
TIME ( s )
7
= ±15V
10
10
3
-1
2 3 5 7
2
t
t
t
t
d(off)
d(on)
f
r
3
10
0
4
2 3 5 7
5
7
10
10
1
4
6
Z
R
τ
i
10
th( j –c )
[K/kW]
i
10
10
10
[sec]
-1
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
10
FREE-WHEEL DIODE REVERSE RECOVERY
2
V
R
Inductive load
( t )
CC
G
= 10Ω, T
= 2250V, V
=
2
Σ
i=1
0.0059
0.0002
n
3
EMITTER CURRENT ( A )
1
R
CHARACTERISTICS
4
j
i
MITSUBISHI HVIGBT MODULES
= 125°C
HIGH POWER SWITCHING USE
5
1–exp
GE
( TYPICAL )
7
= ±15V
0.0978
0.0074
10
2
3
CM900HG-90H


–
l
t
t
rr
rr
2
t
i


0.6571
0.0732
INSULATED TYPE
3
3
4
5
7
0.2392
0.4488
10
4
May 2009
10
10
10
10
7
5
3
2
7
5
3
2
7
5
3
2
4
4
3
2
1