CM900HG-90H Powerex Inc, CM900HG-90H Datasheet - Page 3

• Manufacturer Part Number: CM900HG-90H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM900HG-90H

• Prx Availability: RequestQuote
• Voltage: 4500V
• Current: 900A
• Circuit Configuration: Single
• Rohs Compliant: No

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
MECHANICAL CHARACTERISTICS
Note 1. Pulse width and repetition rate should be such that junction temperature (T
R
R
R
M
M
M
m
CTI
d
d
L
R
Symbol
Symbol
a
s
P CE
th(j-c)Q
th(j-c)R
th(c-f)
CC’+EE’
t
s
t
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E
on(10%)
Thermal resistance
Thermal resistance
Contact thermal resistance
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Internal inductance
Internal lead resistance
/ E
off(10%)
/ E
rec(10%)
Item
Item
j
) should not exceed T
are the integral of 0.1V
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
T
c
jmax
= 25°C
rating (150°C).
CE
x 0.1I
C
grease
x dt.
= 1W/m·K, D(c-f) = 100 µm
Conditions
Conditions
3
j
) does not exceed T
opmax
rating (125°C).
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
600
Min
Min
7.0
3.0
1.0
26
56
—
—
—
—
—
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CM900HG-90H
Limits
Limits
1.35
0.14
Typ
Typ
6.0
17
—
—
—
—
—
—
—
—
INSULATED TYPE
11.0
22.0
15.0
Max
Max
6.0
3.0
—
—
—
—
—
—
—
May 2009
K/kW
K/kW
K/kW
N·m
N·m
N·m
Unit
Unit
mm
mm
mΩ
nH
kg
—