CM900HG-90H Powerex Inc, CM900HG-90H Datasheet
CM900HG-90H
Specifications of CM900HG-90H
Related parts for CM900HG-90H
CM900HG-90H Summary of contents
Page 1
... E G 3-M4 NUTS 14 ±0.3 59.2 61.2 ±0.5 12 screwing depth min. 7.7 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE ● .................................................................. ● V CES ...................................................... ● High Insulated Type ● 1-element in a Pack ● AISiC Baseplate 5-M8 NUTS 57 ±0. ...
Page 2
... V = 2250 900 Ω 125° 100 Inductive load 2 MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE INSULATED TYPE Ratings 4500 ± 20 900 (Note 1) 1800 900 (Note 1) 1800 11300 10200 5100 –40 ~ +150 –40 ~ +125 – ...
Page 3
... M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw T = 25° does not exceed T j rating (150°C). jmax x 0. MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE INSULATED TYPE Limits Min Typ Max — — 11.0 — — 22.0 — 6.0 — ...
Page 4
... T = 25° 125° MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE INSULATED TYPE TRANSFER CHARACTERISTICS ( TYPICAL ) = 20V 25° 125° GATE-EMITTER VOLTAGE ( V ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS ...
Page 5
... Inductive load 10 E off 5 E rec 0 1500 2000 0 5 MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE CHARACTERISTICS ( TYPICAL ) V = 2250V 900A 25° GATE CHARGE ( µC ) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS ( TYPICAL ) ...
Page 6
... th( j – [K/kW] i τ [sec MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE INSULATED TYPE CHARACTERISTICS ( TYPICAL ) = ±15V = 2250V 10Ω 125° ...
Page 7
... 125° 10000 8000 6000 4000 2000 0 4000 5000 0 COLLECTOR-EMITTER VOLTAGE ( V ) 4000 5000 7 MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE INSULATED TYPE SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) = ±15V GE ≥ 10Ω G 1000 2000 3000 4000 5000 May 2009 ...