CM900HG-90H Powerex Inc, CM900HG-90H Datasheet - Page 5

• Manufacturer Part Number: CM900HG-90H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM900HG-90H

• Prx Availability: RequestQuote
• Voltage: 4500V
• Current: 900A
• Circuit Configuration: Single
• Rohs Compliant: No

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
10
10
10
10
10
-1
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
10
8
6
4
2
0
3
2
1
0
0
-1
V
f = 100kHz
V
R
Inductive load
CC
GE
G
2 3
COLLECTOR-EMITTER VOLTAGE ( V )
HALF-BRIDGE SWITCHING ENERGY
CAPACITANCE CHARACTERISTICS
= 10Ω, T
= 0V, T
= 2250V, V
COLLECTOR CURRENT ( A )
500
5 7
CHARACTERISTICS
j
j
10
= 25°C
= 125°C
0
GE
( TYPICAL )
( TYPICAL )
2 3
= ±15V
1000
5 7
10
1
1500
2 3
C
C
C
res
ies
oes
5 7
E
E
E
on
off
rec
2000
10
2
5
-10
-15
15
10
20
15
10
-5
5
0
5
0
0
0
V
V
Inductive load
V
T
j
CC
GE
CE
= 25°C
HALF-BRIDGE SWITCHING ENERGY
GATE CHARGE CHARACTERISTICS
= 2250V, I
= 2250V, I
= ±15V, T
10
MITSUBISHI HVIGBT MODULES
5
HIGH POWER SWITCHING USE
GATE RESISTOR ( Ω )
GATE CHARGE ( µC )
CHARACTERISTICS
j
C
C
= 125°C
= 900A
= 900A
( TYPICAL )
( TYPICAL )
10
20
CM900HG-90H
INSULATED TYPE
15
30
E
E
E
rec
on
off
May 2009
20
40