STM8L101F3 STMicroelectronics, STM8L101F3 Datasheet - Page 49
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STM8L101F3
Manufacturer Part Number
STM8L101F3
Description
Ultra Low Power MCUs, STM8L
Manufacturer
STMicroelectronics
Datasheet
1.STM8L101G2.pdf
(81 pages)
Specifications of STM8L101F3
Low Power Consumption (halt
0.3 μA, Active-halt
Temp. Range
-40 to 85 °C and 125 °C
Three Low Power Modes
Wait, Active-halt, Halt
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STM8L101xx
9.3.5
Table 25.
1. Data based on characterization results, not tested in production.
2. Retention guaranteed after cycling is 10 years at 55 °C.
3. Retention guaranteed after cycling is 1 year at 55 °C.
4. Data based on characterization performed on the whole data memory (2 Kbytes).
Symbol
N
t
I
t
V
prog
prog
RET
RW
DD
Operating voltage
(all modes, read/write/erase)
Programming time for 1- or 64-byte (block)
erase/write cycles (on programmed byte)
Programming time for 1- to 64-byte (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory)
after 10k erase/write cycles
at T
Data retention (data memory)
after 10k erase/write cycles
at T
Data retention (data memory)
after 300k erase/write cycles
at T
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Memory characteristics
T
Table 24.
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
Flash memory
Flash program memory
A
A
A
A
Symbol
= -40 to 125 °C unless otherwise specified.
V
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
+85 °C
+85 °C
+125 °C
RM
Parameter
RAM and hardware registers
Data retention mode
Parameter
Doc ID 15275 Rev 11
(1)
Halt mode (or Reset)
T
T
A
A
=+25 °C, V
=+25 °C, V
f
MASTER
See notes
See notes
Conditions
T
T
T
Conditions
RET
RET
RET
= 55 °C
= 55 °C
= 85 °C
= 16 MHz
DD
DD
(1)(2)
(1)(3)
= 3.0 V
= 1.8 V
Min
1.4
300
20
20
10
1.65
Min
1
(1)
-
-
-
-
(1)(4)
(1)
(1)
(1)
Electrical parameters
Typ
-
Typ
0.7
6
3
-
-
-
-
-
-
Max
Max
3.6
(1)
-
-
-
-
-
-
-
-
-
-
kcycles
years
Unit
Unit
mA
ms
ms
V
49/81
V