STM8S903K3 STMicroelectronics, STM8S903K3 Datasheet - Page 71

• Manufacturer Part Number: STM8S903K3
• Description: 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, 1 Kbyte RAM, 640 bytes EEPROM
• Manufacturer: STMicroelectronics

Specifications of STM8S903K3

• Program Memory: 8 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
• Data Memory: 640 bytes true data EEPROM; endurance 300 kcycles
• Ram: 1 Kbytes
• Advanced Control Timer: 16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

STM8S903K3 STM8S903F3
10.3.6
Symbol
V
V
V
R
t
I
R
lkg
IL
IH
hys
pu
, t
F
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Symbol
Parameter
Input low level voltage
Input high level voltage
Hysteresis
Pull-up resistor
Rise and fall time
(10 % - 90 %)
Digital input leakage current
I
(1)
(2)
even when a write/erase operation addresses a single byte.
DD
Data based on characterization results, not tested in production.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
Parameter
Data retention (data
memory) after 300k
erase/write cycles at
T
Supply current (Flash
programming or erasing
for 1 to 128 bytes)
(1)
A
= +125 °C
Table 40: I/O static characteristics
Conditions
V
V
Fast I/Os
Load = 50 pF
Standard and high sink
I/Os
Load = 50 pF
V
DocID15590 Rev 6
DD
DD
SS
≤ V
= 5 V
= 5 V, V
IN
Conditions
T
≤V
RET
IN
DD
DD
= 85°C
= V
and T
SS
A
unless otherwise specified. All unused
Min
-0.3 V
0.7 x
V
30
DD
Min
1
(1)
Typ
Electrical characteristics
700
45
Typ
2
Max
125
V
20
±1
0.3 x
V
0.3
DD
60
Max
DD
(2)
(2)
(2)
+
Unit
Unit
mV
kΩ
μA
71/115
ns
mA
V