STTH1002C STMicroelectronics, STTH1002C Datasheet - Page 4

• Manufacturer Part Number: STTH1002C
• Description: High Efficiency Ultrafast Diode
• Manufacturer: STMicroelectronics

Specifications of STTH1002C

• Insulated Package: TO-220FPAB

STTH1002C
Fig. 5: Reverse recovery charges versus dI
(typical values, per diode).
240
220
200
180
160
140
120
100
Fig. 7: Peak reverse recovery current versus dI
(typical values, per diode).
13
12
11
10
Fig. 9-1: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, e
80
70
60
50
40
30
20
10
4/8
80
60
40
20
9
8
7
6
5
4
3
2
1
0
0
0
10
0
I
R
10
RM
Q (nC)
th(j-a)
I =5A
V =160V
F
rr
R
I =5A
V =160V
(A)
F
R
2
(°C/W)
4
6
CU
S(Cu)(cm²)
dI /dt(A/µs)
8
dI /dt(A/µs)
: 35µm) for D
F
T =125°C
j
F
100
T =125°C
100
10
j
12
14
T =25°C
2
j
PAK.
T =25°C
j
16
18
F
F
1000
1000
/dt
/dt
20
Fig. 6: Reverse recovery time versus dI
(typical values, per diode).
80
70
60
50
40
30
20
10
Fig. 8:
temperature.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 9-2: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, e
100
0
90
80
70
60
50
40
30
20
10
0
10
25
t (ns)
Q ;
0
R
rr
I =5A
V =160V
I =5A
V =160V
F
rr
F
th(j-a)
R
R
I
RM
2
(°C/W)
[T ]/Q ;I
j
Dynamic parameters versus junction
50
4
rr RM
6
[T =125°C]
I
RM
j
CU
75
S(Cu)(cm²)
dI /dt(A/µs)
8
T =125°C
: 35µm) for DPAK.
F
j
Q
rr
T (°C)
100
j
10
T =25°C
100
j
12
14
125
16
18
F
1000
/dt
150
20