STTH1002C STMicroelectronics, STTH1002C Datasheet - Page 2

• Manufacturer Part Number: STTH1002C
• Description: High Efficiency Ultrafast Diode
• Manufacturer: STMicroelectronics

Specifications of STTH1002C

• Insulated Package: TO-220FPAB

STTH1002C
THERMAL PARAMETERS
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test: * tp = 5ms, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.73 x I
DYNAMIC ELECTRICAL CHARACTERISTICS
2/8
Symbol
Symbol
R
R
Symbol
V
th (j-c)
th (j-c)
I
V
I
R
F
RM
t
t
**
rr
FP
*
fr
** tp = 380µs, δ < 2%
F(AV)
Junction to case
Coupling
Reverse leakage
current
Forward voltage drop
Reverse
recovery time
Reverse
recovery current
Forward
recovery time
Forward
recovery voltage
Parameter
+ 0.032 I
Parameter
F
2
(RMS)
th(j-c)
TO-220AB / I
/ DPAK
TO-220FPAB
TO-220AB / I
TO-220FPAB
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 25°C
(per diode) + P(diode2) x R
Parameter
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 25°C
Tj = 150°C
Tj = 150°C
Tests conditions
2
2
Tests conditions
PAK / D
PAK / D
I
dI
I
dI
I
V
I
F
F
F
F
FR
F
F
= 1 A V
= 5 A V
= 5 A dI
= 5 A dI
/dt = 100 A/µs
/dt = 200 A/µs
= 1.1 x V
2
2
PAK
PAK / DPAK
V
I
I
I
I
F
F
F
F
R
R
R
= 5 A
= 10 A
= 5 A
= 10 A
F
F
= V
= 30V
= 160V
/dt = 100 A/µs
/dt = 100 A/µs
F
max
Per diode
Per device
Per diode
Per device
th(c)
RRM
Min.
Min.
Maximum
4.0
2.5
6.5
1.0
3.5
5
Typ.
0.78
Typ.
3
5.9
2.4
20
Max.
1.25
0.89
1.05
1.1
40
Max.
5
110
7.6
25
°C/W
°C/W
Unit
Unit
Unit
µA
V
ns
ns
A
V