STTH1002C STMicroelectronics, STTH1002C Datasheet - Page 3

• Manufacturer Part Number: STTH1002C
• Description: High Efficiency Ultrafast Diode
• Manufacturer: STMicroelectronics

Specifications of STTH1002C

• Insulated Package: TO-220FPAB

Fig. 1: Peak current versus duty cycle (per diode).
60
50
40
30
20
10
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
100
Fig. 3-2: Relative variation of thermal impedance
junction
(TO-220FPAB).
1.0
0.1
0
90
80
70
60
50
40
30
20
10
1.E-03
0
0.0
0.00
I (A)
M
Z
I
FM
th(j-c)
Single pulse
P = 2W
(A)
0.25
0.1
/R
0.50
th(j-c)
0.2
to
P = 5W
0.75
P = 10W
0.3
case
1.E-02
1.00
0.4
T =150°C
1.25
j
V
versus
t (s)
p
FM
1.50
0.5
δ
(V)
1.75
0.6
1.E-01
2.00
T =25°C
pulse
j
0.7
2.25
I
δ
0.8
M
=tp/T
2.50
duration
0.9
T
2.75
1.E+00
tp
3.00
1.0
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
100
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
I
1.0
0.1
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
100
2
90
80
70
60
50
40
30
20
10
10
1.E-03
0
PAK, D
0.00
Z
0
I
C(pF)
FM
th(j-c)
Single pulse
(A)
0.25
/R
2
0.50
th(j-c)
PAK, DPAK).
0.75
50
1.E-02
1.00
T =150°C
j
1.25
V
t (s)
p
V (V)
FM
1.50
100
R
(V)
1.75
T =25°C
1.E-01
j
2.00
STTH1002C
2.25
150
V
2.50
OSC
F=1MHz
T =25°C
=30mV
j
2.75
RMS
1.E+00
3/8
3.00
200