STTH102-Y STMicroelectronics, STTH102-Y Datasheet - Page 4
STTH102-Y
Manufacturer Part Number
STTH102-Y
Description
Automotive high efficiency ultrafast diode
Manufacturer
STMicroelectronics
Datasheet
1.STTH102-Y.pdf
(7 pages)
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4/7
Figure 7.
Figure 9.
3.5
3.0
2.5
2.0
1.5
1.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
I
RM
1
I
RM
; t ; Q [T ] /
dI /dt=200A/µs
F
V =100V
rr
I =1A
V =100V
T =125°C
I =I
(A)
F
F
R
R
j
F(AV)
50
rr
Peak recovery current versus dI
(90% confidence)
Relative variations of dynamic
parameters versus junction
temperature
j
I
RM
75
; t ; Q [T =25°C]
10
rr
dI /dt(A/µs)
rr
F
100
T (°C)
j
j
T =125°C
j
125
100
T =25°C
j
Q
I
RR
RM
150
t
rr
Doc ID 17982 Rev 1
175
F
1000
/dt
Figure 8.
Figure 10. Thermal resistance junction to
35.0
32.5
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
120
110
100
7.5
5.0
2.5
0.0
90
80
70
60
50
40
30
20
10
0
0.0
1
Q (nC)
R
th(j-a)
rr
I =1A
V =100V
F
R
0.5
(°C/W)
Epoxy printed circuit board FR4, copper thickness: 35 µm
Reverse recovery charges versus
dI
ambient versus copper surface
under each lead
1.0
F
/dt (90% confidence)
1.5
10
2.0
dI /dt(A/µs)
F
T =125°C
2.5
j
3.0
100
3.5
T =25°C
j
4.0
4.5
S(cm²)
1000
5.0