STTH102-Y STMicroelectronics, STTH102-Y Datasheet - Page 2

• Manufacturer Part Number: STTH102-Y
• Description: Automotive high efficiency ultrafast diode
• Manufacturer: STMicroelectronics

1
Table 2.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation: P = 0.65 x I
Table 5.
2/7
Symbol
Symbol
Symbol
Symbol
V
R
dV/dt
I
I
V
I
F(AV)
T
V
R
FSM
RRM
th(j-l)
T
F
t
t
stg
FP
rr
fr
(1)
(2)
j
Repetitive peak reverse voltage
Average forward current
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
Critical rate of rise of reverse voltage
Junction to lead
Reverse leakage current
Forward voltage drop
Reverse recovery time
Forward recovery time
Forward recovery
voltage
p
p
Characteristics
Absolute rating (limiting values)
Thermal resistance
Static Electrical Characteristics
Dynamic electrical characteristics
= 5 ms, δ < 2%
= 380 µs, δ < 2%
Parameter
Parameter
T
T
T
j
j
j
= 25 °C
= 25 °C
= 25 °C
Parameter
Parameter
Tests conditions
Doc ID 17982 Rev 1
T
T
T
T
I
I
I
V
I
j
j
j
j
F
R
F
F
= 25 °C
= 125 °C
= 25 °C
= 125 °C
FR
= 1 A dI
= 0.5 A I
= 1 A dI
= 1 A
Tests conditions
= 1.1 x V
T
t
p
L
rr
F
= 10 ms sinusoidal
F
= 148 °C δ = 0.5
/dt = 50 A/ms
/dt = 50 A/ms
= 0.25 A
V
I
I
I
F
F
F
F
max
R
= 700 mA
= 1 A
= 1 A
= V
RRM
Min.
Min.
F(AV)
+ 0.130 I
Typ.
0.68
Typ.
1.8
12
50
1
-65 to + 175
-40 to +175
10000
Value
Value
F
200
2
40
30
1
(RMS)
Max.
Max.
0.90
0.97
0.78
25
20
1
°C/W
V/µs
Unit
Unit
Unit
Unit
µA
°C
°C
ns
ns
V
A
A
V
V