STTH102-Y STMicroelectronics, STTH102-Y Datasheet - Page 3

• Manufacturer Part Number: STTH102-Y
• Description: Automotive high efficiency ultrafast diode
• Manufacturer: STMicroelectronics

Figure 1.
Figure 3.
Figure 5.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
1.E-01
1
0.0
P
1
Z
C(pF)
δ
δ
δ
F(AV)
th(j-a)
= 0.5
= 0.2
= 0.1
Single pulse
/R
(W)
th(j-a)
0.2
Average forward power dissipation
versus average forward current
Relative variation of thermal
impedance junction to ambient
versus pulse duration
reverse voltage applied
(typical values)
Junction capacitance versus
1.E+00
δ = 0.05
0.4
e
10
(Cu)
= 35 µm, recommended pad layout
epoxy printed circuit board,
δ = 0.1
I
1.E+01
F(AV)
V (V)
0.6
R
(A)
δ = 0.2
100
0.8
1.E+02
δ = 0.5
δ =t /T
δ
=tp/T
p
V
OSC
1.0
F=1MHz
T =25°C
=30mV
j
T
Doc ID 17982 Rev 1
δ = 1
T
t (s)
p
t
RMS
1.E+03
p
tp
1000
1.2
Figure 2.
Figure 4.
Figure 6.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100.0
70
60
50
40
30
20
10
10.0
0
1.0
0.1
0
1
I
t (ns)
F(AV)
rr
0.0
I
FM
δ
=tp/T
(A)
(A)
0.2
25
T
0.4
Average forward current versus
ambient temperature (δ = 0.5)
Forward voltage drop versus
forward current
Reverse recovery time versus dI
(90% confidence)
(typical values)
tp
T =125°C
j
0.6
50
(maximum values)
10
T =125°C
j
0.8
75
T
dI /dt(A/µs)
1.0
amb
R
F
th(j-a)
V
T =25°C
j
FM
=120°C/W
(°C)
1.2
(maximum values)
(V)
100
T =125°C
j
T =25°C
j
1.4
R
th(j-a)
100
=R
1.6
th(j-I)
125
1.8
2.0
150
I =1A
V =100V
T =125°C
F
R
j
2.2
1000
F
175
2.4
/dt
3/7