BF1118W NXP Semiconductors, BF1118W Datasheet - Page 5

• Manufacturer Part Number: BF1118W
• Description: These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1118_1118R_1118W_1118WR
Product data sheet
Fig 1.
Fig 3.
L
ins(on)
(dB)
−1
−2
−3
−4
0
0
V
forward current).
Measured in test circuit; see
On-state insertion loss as a function of
frequency; typical values
On-state: V = 0 V.
Off-state: V = 3.3 V.
Test circuit
SK
= V
200
DK
= 0 V; R
400
S
= R
L
= 50 ; I
600
Figure
F
800
3.
All information provided in this document is subject to legal disclaimers.
= 0 mA (diode
BF1118W/BF1118RW
input
50 Ω
001aal987
f (MHz)
BF1118/BF1118R/
1000
1 nF
Rev. 2 — 11 January 2012
Fig 2.
V
V
47 kΩ
4.7 kΩ
ISL
(dB)
BF1118(R); BF1118W(R)
100 kΩ
100 kΩ
1 nF
1 nF
1 nF
−20
−40
−60
off
0
0
V
forward current).
Measured in test circuit; see
Off-state isolation as a function of frequency;
typical values
001aal989
SK
50 Ω
output
= V
200
DK
= 3.3 V; R
400
S
= R
600
L
= 50 ; I
Figure
Silicon RF switches
© NXP B.V. 2012. All rights reserved.
800
3.
F
001aal988
f (MHz)
= 1 mA (diode
1000
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