BF1118W NXP Semiconductors, BF1118W Datasheet - Page 10

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode

BF1118W

Manufacturer Part Number
BF1118W
Description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BF1118_1118R_1118W_1118WR
Product data sheet
Document ID
BF1118_1118R_1118W_1118WR v.2
Modifications:
BF1118_1118R_1118W_1118WR v.1
Revision history
Table 9.
Acronym
AQL
MOSFET
RF
S4
VCR
Abbreviations
Release date
20120111
20100629
All information provided in this document is subject to legal disclaimers.
Description
Acceptable Quality Level
Metal-Oxide Semiconductor Field-Effect Transistor
Radio Frequency
Special inspection level 4
Video Cassette Recorder
Figure
Rev. 2 — 11 January 2012
3: changed left-side output to input
Data sheet status
Product data sheet
Product data sheet
BF1118(R); BF1118W(R)
Change notice Supersedes
-
-
BF1118_1118R_1118W_
1118WR v.1
-
Silicon RF switches
© NXP B.V. 2012. All rights reserved.
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