BF1118W NXP Semiconductors, BF1118W Datasheet - Page 3

• Manufacturer Part Number: BF1118W
• Description: These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
BF1118_1118R_1118W_1118WR
Product data sheet
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6.
[1]
Type number
BF1118
BF1118R
BF1118W
BF1118WR
Symbol
FET
V
V
V
V
I
Diode
V
I
FET and diode
T
T
Symbol
R
D
F
stg
j
DS
SD
DG
SG
R
th(j-sp)
Soldering point of FET gate and diode anode lead.
Marking
Limiting values
Thermal characteristics
Parameter
drain-source voltage
source-drain voltage
drain-gate voltage
source-gate voltage
drain current
reverse voltage
forward current
storage temperature
junction temperature
Parameter
thermal resistance from junction
to solder point
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 January 2012
Conditions
BF1118(R); BF1118W(R)
Conditions
Marking code
VC%
VD%
VB
VC
[1]
Silicon RF switches
Typ
250
Min
-
-
-
-
-
-
-
65
-
© NXP B.V. 2012. All rights reserved.
Max
3
3
7
7
10
35
100
+150
150
Unit
K/W
3 of 13
Unit
V
V
V
V
mA
V
mA
C
C