MX0912B251Y NXP Semiconductors, MX0912B251Y Datasheet - Page 7
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MX0912B251Y
Manufacturer Part Number
MX0912B251Y
Description
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange
Manufacturer
NXP Semiconductors
Datasheet
1.MX0912B251Y.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MX0912B251Y
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
MX0912B251Y
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
1997 Feb 19
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
40
V CC
0.635
6
2
6
3
2.5
30
8
L1
L2
3
9
Fig.6 Broadband test circuit.
C3
3
3
C5
4.5
22
5
7
5
5
5
22
C6
5
11
3
30
L3
0.635
12
C4
V CC
MGK068
C1
1 2 1
3
MX0912B251Y
40
Product specification