MX0912B251Y NXP Semiconductors, MX0912B251Y Datasheet

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange

MX0912B251Y

Manufacturer Part Number
MX0912B251Y
Description
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
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Part Number:
MX0912B251Y
Manufacturer:
M/A-COM
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5 000
Part Number:
MX0912B251Y
Manufacturer:
NXP/恩智浦
Quantity:
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Product specification
Supersedes data of November 1994
DATA SHEET
MX0912B251Y
NPN microwave power transistor
DISCRETE SEMICONDUCTORS
1997 Feb 19

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MX0912B251Y Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 ...

Page 2

... It must never be thrown out with the general or domestic waste. 1997 Feb 19 PINNING - SOT439A olumns common base class C broadband amplifier (V) (W) 50 >235 WARNING 2 Product specification MX0912B251Y PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange MAM045 Top view Fig.1 Simplified outline and symbol ...

Page 3

... Feb 19 CONDITIONS open emitter open base open collector 10 note 1 MGL041 200 Product specification MX0912B251Y MIN. MAX 10% 690 65 +200 200 235 UNIT ...

Page 4

... measured in the test jig as shown in Fig.6 and working in class C broadband (2) (GHz) (V) (W) 50 >235 typ. 275 1.03 to 1.09 50 typ. 280 4 Product specification MX0912B251Y CONDITIONS MAX. 1.9 0 10% 0.28 CONDITIONS MAX 100 ...

Page 5

... CC p Fig.3 Load power as a function of frequency. (In broadband test circuit as shown in Fig.6) 1997 Feb 19 MGL042 handbook, halfpage 1.15 1.25 f (GHz Fig.4 5 Product specification MX0912B251Y 50 C (%) 45 40 0.95 1.05 1. 10%. p Collector efficiency as a function of frequency. (In broadband test circuit as shown in Fig.6) MGL043 1 ...

Page 6

... Feb 300 Fig.5 Pulse definition. VALUE total length = 12 mm; height of loop = 9 mm int. diameter 3 mm 100 470 0 Product specification MX0912B251Y MGK066 DIMENSIONS CATALOGUE NO. ATC, ref. 100A101KP50X Erie, ref. 1250-003 Tekelec, ref. 729.1 ...

Page 7

... V CC Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: = 10. r 1997 Feb 2 4 Fig.6 Broadband test circuit. 7 Product specification MX0912B251Y 0.635 MGK068 ...

Page 8

... Fig.8 Optimum load impedance as a function of frequency associated with input impedance. 1997 Feb 19 1 0.5 0.960 GHz 1.215 GHz 0.2 0.5 1 0.2 0 0.5 0.2 0.5 1 0.2 1.215 GHz 0.960 GHz 0 Product specification MX0912B251Y MGL039 MGL040 ...

Page 9

... NPN microwave power transistor PACKAGE OUTLINE handbook, full pagewidth 3.3 2.9 3.3 Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. 1997 Feb 19 12.85 max 0.15 max 3 23 max seating plane 3.7 max 1 2 8.25 16.5 Fig.9 SOT439A. 9 Product specification MX0912B251Y 6 max 1.6 max 2.7 min 9.85 10.3 max 10.0 2.7 min MBC881 ...

Page 10

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 10 Product specification MX0912B251Y ...

Page 11

... Philips Semiconductors NPN microwave power transistor 1997 Feb 19 NOTES 11 Product specification MX0912B251Y ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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