MX0912B251Y NXP Semiconductors, MX0912B251Y Datasheet - Page 3

• Manufacturer Part Number: MX0912B251Y
• Description: NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
1997 Feb 19
handbook, halfpage
V
V
V
V
I
P
T
T
T
SYMBOL
C
stg
j
sld
CBO
CES
CEO
EBO
tot
NPN microwave power transistor
t
Fig.2
p
= 10 s;
1000
P tot
(W)
800
600
400
200
0
50
Maximum power dissipation derating as a
function of mounting base temperature.
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
(peak power)
storage temperature
operating junction temperature
soldering temperature
= 10%; P
0
tot max
PARAMETER
= 690 W.
100
T mb ( C)
MGL041
open emitter
R
open base
open collector
t
T
t
p
200
mb
BE
10 s; note 1
10 s;
= 75 C; t
= 0
3
p
10%
CONDITIONS
10 s;
10%
MX0912B251Y
MIN.
65
Product specification
65
60
20
3
15
690
+200
200
235
MAX.
V
V
V
V
A
W
C
C
C
UNIT