BLS7G2933S-150 NXP Semiconductors, BLS7G2933S-150 Datasheet - Page 8

• Manufacturer Part Number: BLS7G2933S-150
• Description: 150 W LDMOS power transistor intended for radar applications in the 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Package outline
Fig 8.
BLS7G2933S-150
Product data sheet
Ceramic earless flanged cavity package; 2 leads
DIMENSIONS (mm are the original dimensions)
inches
UNIT
mm
SOT922-1
VERSION
OUTLINE
Package outline SOT922-1
0.166
0.139
4.22
3.53
A
12.42
12.17
0.489
0.479
b
H
0.006
0.004
0.15
0.10
U
c
2
IEC
L
A
17.58
17.22
0.692
0.678
D
17.50
17.25
0.689
0.679
D
1
JEDEC
0.375
0.365
9.53
9.27
All information provided in this document is subject to legal disclaimers.
E
U
REFERENCES
D
D
b
1
0.365
0.355
1
1
2
9.27
9.02
E
Rev. 2 — 23 February 2011
1
0
0.052
0.032
1.32
0.81
F
JEITA
3
scale
15.62
14.34
0.615
0.525
5
H
w2
F
M
3.05
2.03
0.12
0.08
D
10 mm
L
D
M
0.067
0.057
1.70
1.45
Q
17.75
17.50
0.699
0.689
LDMOS S-band radar power transistor
U
1
BLS7G2933S-150
0.375
0.365
9.53
9.27
E
U
1
2
PROJECTION
EUROPEAN
0.010
Q
0.25
w
2
c
E
© NXP B.V. 2011. All rights reserved.
ISSUE DATE
05-11-14
05-11-22
SOT922-1
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