BLS7G2933S-150 NXP Semiconductors, BLS7G2933S-150 Datasheet - Page 4

• Manufacturer Part Number: BLS7G2933S-150
• Description: 150 W LDMOS power transistor intended for radar applications in the 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLS7G2933S-150
Product data sheet
7.1 Ruggedness in class-AB operation
Table 8.
The BLS7G2933S-150 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
f
GHz
2.9
3.0
3.1
3.2
3.3
Dq
Fig 1.
= 100 mA; P
Definition of transistor impedance
Typical impedance
All information provided in this document is subject to legal disclaimers.
L
= 150 W; t
Rev. 2 — 23 February 2011
p
= 300 μs; δ = 10 %.
Z
Ω
2.2 − j7.4
2.9 − j6.5
4.2 − j5.9
6.0 − j6.5
6.5 − j8.9
S
gate
Z
S
001aaf059
LDMOS S-band radar power transistor
Z
drain
L
BLS7G2933S-150
Z
Ω
4.2 − j6.3
3.8 − j6.4
3.4 − j6.3
2.9 − j6.2
2.5 − j5.9
L
DS
= 32 V;
© NXP B.V. 2011. All rights reserved.
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