BLS7G2933S-150 NXP Semiconductors, BLS7G2933S-150 Datasheet - Page 6

• Manufacturer Part Number: BLS7G2933S-150
• Description: 150 W LDMOS power transistor intended for radar applications in the 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLS7G2933S-150
Product data sheet
Fig 4.
(%)
η
(1) f = 2900 MHz
(2) f = 3000 MHz
(3) f = 3100 MHz
(4) f = 3200 MHz
(5) f = 3300 MHz
D
60
40
20
0
0
V
typical values
Drain efficiency as a function of load power;
DS
= 32 V; I
40
Dq
= 100 mA; t
80
Fig 6.
(1)
(2)
(3)
(4)
(5)
120
p
V
Input return loss as a function of frequency; typical values
= 300 μs; δ = 10 %.
DS
= 32 V; P
160
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001aan030
P
L
(W)
L
RL
(dB)
= 150 W; I
Rev. 2 — 23 February 2011
200
in
20
16
12
8
4
0
2850
Dq
2950
= 100 mA; t
Fig 5.
(dB)
G
3050
p
17
15
13
11
9
7
2850
p
= 300 μs; δ = 10 %.
V
δ = 10 %.
Power gain and drain efficiency as function of
frequency; typical values
DS
= 32 V; P
3150
LDMOS S-band radar power transistor
2950
BLS7G2933S-150
3250
L
= 150 W; I
3050
001aan032
f (MHz)
G
η
D
p
3350
3150
Dq
= 100 mA; t
3250
© NXP B.V. 2011. All rights reserved.
001aan031
f (MHz)
p
= 300 μs;
3350
60
50
40
30
20
10
(%)
η
D
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