BLF8G10LS-160 NXP Semiconductors, BLF8G10LS-160 Datasheet - Page 6

• Manufacturer Part Number: BLF8G10LS-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF8G10L-160_8G10LS-160
Product data sheet
Fig 7.
Fig 9.
RL
(dB)
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
-10
in
-14
-18
-22
-26
38
V
Input return loss as a function of
output power; typical values
V
Peak-to-average ratio as a function of output power; typical values
DS
DS
= 30 V; I
= 30 V; I
(3)
(2)
(1)
Dq
Dq
42
= 1100 mA.
= 1100 mA.
PAR
(dB)
46
9
8
7
6
5
P
38
L
All information provided in this document is subject to legal disclaimers.
aaa-001292
(dBm)
BLF8G10L-160; BLF8G10LS-160
Rev. 3 — 16 February 2012
50
(1)
(2)
(3)
42
Fig 8.
ACPR
(dBc)
46
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
-20
-30
-40
-50
-60
P
38
V
Adjacent channel power ratio (5 MHz and
10 MHz) as function of output power; typical
values
L
DS
aaa-001294
(dBm)
= 30 V; I
(1)
50
Dq
(2)
42
= 1100 mA.
(3)
Power LDMOS transistor
ACPR 5M
46
P
© NXP B.V. 2012. All rights reserved.
L
ACPR 10M
aaa-001293
(dBm)
50
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