BLF8G10LS-160 NXP Semiconductors, BLF8G10LS-160 Datasheet - Page 3

• Manufacturer Part Number: BLF8G10LS-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
7. Test information
BLF8G10L-160_8G10LS-160
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Test signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 64 DPCH; f
RF performance at V
class-AB production test circuit.
The BLF8G10L-160 and BLF8G10LS-160 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol Parameter
V
V
I
I
I
g
Symbol
G
R
RL

ACPR
DSS
DSX
GSS
j
DS
fs
D
(BR)DSS
GS(th)
DS(on)
p
= 25
in
= 30 V; I

C unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
Characteristics
Functional test information
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Dq
= 1100 mA; P
All information provided in this document is subject to legal disclaimers.
DS
BLF8G10L-160; BLF8G10LS-160
= 30 V; I
Rev. 3 — 16 February 2012
1
Dq
L
= 920 MHz; f
= 130 W (CW); f = 920 MHz to 960 MHz.
= 1100 mA; T
Conditions
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
2
= 7.7 A
= 925 MHz; f
case
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
Conditions
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
GS(th)
GS(th)
= 25
= 35 W
= 35 W
= 35 W
= 35 W
D
DS
D
D

= 2.2 mA
+ 3.75 V;
DS
+ 3.75 V;
C; unless otherwise specified; in a
= 220 mA
= 7.7 A
= 28 V
3
= 0 V
= 955 MHz; f
Min
19
-
27
-
Power LDMOS transistor
Min
65
1.5
-
-
-
-
-
4
Typ
19.7
15
29
38
= 960 MHz;
© NXP B.V. 2012. All rights reserved.
Typ
-
2.0
-
37.0
-
14.6
86
Max
-
10
-
34
Max
-
2.3
5
-
0.5
-
-
Unit
dB
dB
%
dBc
3 of 13
Unit
V
V
A
A
A
S
m