BLF8G10L-160 NXP Semiconductors, BLF8G10L-160 Datasheet
![160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz](/photos/41/53/415337/sot502a_3d_sml.gif)
BLF8G10L-160
Related parts for BLF8G10L-160
BLF8G10L-160 Summary of contents
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... BLF8G10L-160; BLF8G10LS-160 Power LDMOS transistor Rev. 3 — 16 February 2012 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical RF performance at T Test signal 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier. ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF8G10L-160 (SOT502A BLF8G10LS-160 (SOT502B [1] Connected to flange 3. Ordering information Table 3. Type number BLF8G10L-160 BLF8G10LS-160 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5 ...
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... Symbol D ACPR 7.1 Ruggedness in class-AB operation The BLF8G10L-160 and BLF8G10LS-160 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF8G10L-160_8G10LS-160 Product data sheet BLF8G10L-160; BLF8G10LS-160 Characteristics C unless otherwise specified. ...
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... 1100 mA ( 920 MHz ( 940 MHz ( 960 MHz Fig 2. Power gain and drain efficiency as function of output power; typical values BLF8G10L-160_8G10LS-160 Product data sheet BLF8G10L-160; BLF8G10LS-160 Typical impedance information = defined in Figure () 4.0 j3.8 4.4 j4.2 4.6 ...
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... 1100 mA ( 920 MHz ( 940 MHz ( 960 MHz Fig 5. Power gain and drain efficiency as function of output power; typical values BLF8G10L-160_8G10LS-160 Product data sheet BLF8G10L-160; BLF8G10LS-160 - (dB) -13 (3) -16 (2) -19 (1) -22 - aaa-001290 60 η ...
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... 1100 mA ( 920 MHz ( 940 MHz ( 960 MHz Fig 9. Peak-to-average ratio as a function of output power; typical values BLF8G10L-160_8G10LS-160 Product data sheet BLF8G10L-160; BLF8G10LS-160 aaa-001292 ACPR (dBc (dBm 920 MHz ( 940 MHz ( 960 MHz Fig 8 ...
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... Figure 10 Component C1, C2, C3, C4, C5, C6 C7, C9, C12, C14 C8, C10, C11, C13 C15, C16 BLF8G10L-160_8G10LS-160 Product data sheet BLF8G10L-160; BLF8G10LS-160 = 3.5 F/m; thickness = 0.762 mm; thickness copper plating = 35 m. r List of components for component layout. Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor All information provided in this document is subject to legal disclaimers ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLF8G10L-160_8G10LS-160 Product data sheet BLF8G10L-160; BLF8G10LS-160 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLF8G10L-160_8G10LS-160 Product data sheet BLF8G10L-160; BLF8G10LS-160 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...
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... Table 11. Revision history Document ID BLF8G10L-160_8G10LS-160 v.3 Modifications: BLF8G10L-160_8G10LS-160 v.2 BLF8G10L-160_8G10LS-160 v.1 BLF8G10L-160_8G10LS-160 Product data sheet BLF8G10L-160; BLF8G10LS-160 Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...
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... This document supersedes and replaces all information supplied prior to the publication hereof. BLF8G10L-160_8G10LS-160 Product data sheet BLF8G10L-160; BLF8G10LS-160 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF8G10L-160_8G10LS-160 Product data sheet BLF8G10L-160; BLF8G10LS-160 In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 16 February 2012 Document identifier: BLF8G10L-160_8G10LS-160 ...