BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet - Page 8

• Manufacturer Part Number: BLF7G27L-200PB
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-200PB
Product data sheet
7.7 Test circuit
Table 9.
See
The used PCB material is Rogers RO4350B with a thickness of 0.76 mm.
[1]
[2]
[3]
[4]
[5]
[6]
Component
C1, C6, C13
C2, C4
C3
C5, C10, C11
C7
C8, C12
C9
R1
R2
R3
R4, R6
R5
Fig 15. Component layout
Murata or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 100A or capacitor of same quality.
AVX or capacitor of same quality.
TDK or capacitor of same quality.
Philips or resistor of same quality.
Figure 15
See
List of components
Table 9
for component layout.
All information provided in this document is subject to legal disclaimers.
C1
for list of components.
Rev. 2 — 20 February 2012
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
chip resistor
chip resistor
chip resistor
chip resistor
C4
R1
C3
C2
R2
R5
R4
R6
R3
BLF7G27L-200PB
C10
C5
C11
Value
4.7 F
9.1 pF
22 pF
8.2 pF
470 nF
10 F
470 F
820 
2K2 
22 
10 
33 
C7
C13
C6
Power LDMOS transistor
C12
C9
aaa-001942
C8
© NXP B.V. 2012. All rights reserved.
[1]
[2]
[3]
[2]
[4]
[5]
[6]
[6]
[6]
[6]
[6]
Remarks
Murata
ATC100B
ATC100A
ATC100B
AVX
TDK
Philips 0603
Philips 0603
Philips 0603
Philips 0603
Philips 0603
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