BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet - Page 5

• Manufacturer Part Number: BLF7G27L-200PB
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-200PB
Product data sheet
Fig 4.
Fig 6.
G%
*
S
S S
(1) G
(2) G
(3) G
(4) 
(5) 
(6) 
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz






V
probability on the CCDF.
Power gain and drain efficiency as function of
average load power; typical values
V
Adjacent power channel ratio (5 MHz) as a function of average load power; typical values
DS
D
D
D
DS
p
p
p
; f = 2620 MHz
; f = 2650 MHz
; f = 2690 MHz
; f = 2620 MHz
; f = 2650 MHz
; f = 2690 MHz
= 32 V; I
= 32 V; I

7.4 1-carrier W-CDMA
Dq
Dq
= 1700 mA; PAR = 7.2 dB at 0.01 
= 1700 mA; PAR = 7.2 dB at 0.01  probability on the CCDF.

$&35

G%F






3
0







/ $9


All information provided in this document is subject to legal disclaimers.
DDD
:

Rev. 2 — 20 February 2012









'

Fig 5.

3$5
G%
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
3
/ $9






V
probability on the CCDF.
Peak-to-average power ratio as a function of
peak power; typical values

DS
DDD
:
= 32 V; I


BLF7G27L-200PB
Dq
= 1700 mA; PAR = 7.2 dB at 0.01 

Power LDMOS transistor

3
/ $9



© NXP B.V. 2012. All rights reserved.

DDD
:

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