BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet - Page 10

• Manufacturer Part Number: BLF7G27L-200PB
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Handling information
10. Abbreviations
BLF7G27L-200PB
Product data sheet
CAUTION
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
ESD
LDMOS
LDMOST
PAR
RF
VSWR
W-CDMA
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Abbreviations
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 February 2012
BLF7G27L-200PB
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
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