BLF7G27L-135 NXP Semiconductors, BLF7G27L-135 Datasheet - Page 6

• Manufacturer Part Number: BLF7G27L-135
• Description: 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-135
Objective data sheet
Fig 7.
(dB)
G
(1) f = 2600 MHz
(2) f = 2700 MHz
p
18
17
16
15
14
13
0
V
Pulsed CW power gain as a function of output
power; typical values
DS
= 28 V; I
40
7.3 Pulsed CW
Dq
(2)
(1)
= 1300 mA.
80
120
160
All information provided in this document is subject to legal disclaimers.
aaa-000096
P
L
(W)
Rev. 1 — 1 November 2011
200
Fig 8.
(%)
η
(1) f = 2600 MHz
(2) f = 2700 MHz
D
60
40
20
0
0
V
Pulsed CW drain efficiency as a function of
output power; typical values
DS
= 28 V; I
40
Dq
= 1300 mA.
80
BLF7G27L-135
(1)
(2)
Power LDMOS transistor
120
© NXP B.V. 2011. All rights reserved.
160
aaa-000097
P
L
(W)
200
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