BLF7G27L-135 NXP Semiconductors, BLF7G27L-135 Datasheet - Page 4

• Manufacturer Part Number: BLF7G27L-135
• Description: 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-135
Objective data sheet
Fig 1.
Fig 3.
ACPR
(dBc)
(dB)
G
(1) f = 2600 MHz
(2) f = 2700 MHz
(1) f = 2600 MHz
(2) f = 2700 MHz
885k
p
-30
-40
-50
-60
-70
18
17
16
15
14
13
0
V
Single carrier IS-95 power gain as a function of
average output power; typical values
0
V
Single carrier IS-95 ACPR at 885 kHz as a
function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
(2)
(1)
7.2 Single carrier IS-95
20
20
Dq
Dq
= 1300 mA.
= 1300 mA.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
40
40
(2)
(1)
60
60
P
P
All information provided in this document is subject to legal disclaimers.
aaa-000090
L(AV)
aaa-000092
L(AV)
(W)
(W)
Rev. 1 — 1 November 2011
80
80
Fig 2.
Fig 4.
ACPR
(dBc)
(%)
η
(1) f = 2600 MHz
(2) f = 2700 MHz
(1) f = 2600 MHz
(2) f = 2700 MHz
D
1980k
-50
-60
-70
-80
-90
50
40
30
20
10
0
0
0
V
Single carrier IS-95 drain efficiency as a
function of average output power;
typical values
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
20
20
(2)
(1)
Dq
Dq
= 1300 mA.
= 1300 mA.
BLF7G27L-135
40
40
Power LDMOS transistor
(1)
(2)
60
60
© NXP B.V. 2011. All rights reserved.
P
P
aaa-000091
L(AV)
aaa-000093
L(AV)
(W)
(W)
80
80
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