BLF7G27L-135 NXP Semiconductors, BLF7G27L-135 Datasheet - Page 5

• Manufacturer Part Number: BLF7G27L-135
• Description: 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-135
Objective data sheet
Fig 5.
PAR
(dB)
(1) f = 2600 MHz
(2) f = 2700 MHz
10
8
6
4
0
V
Single carrier IS-95 peak-to-average power
ratio as a function of average output power;
typical values
DS
= 28 V; I
20
Dq
= 1300 mA.
40
(1)
(2)
60
P
All information provided in this document is subject to legal disclaimers.
aaa-000094
L(AV)
(W)
Rev. 1 — 1 November 2011
80
Fig 6.
P
(dB)
L(M)
(1) f = 2600 MHz
(2) f = 2700 MHz
240
160
80
0
0
V
Single carrier IS-95 peak output power as a
function of average output power;
typical values
DS
= 28 V; I
20
Dq
= 1300 mA.
BLF7G27L-135
(1)
(2)
40
Power LDMOS transistor
60
© NXP B.V. 2011. All rights reserved.
P
aaa-000095
L(AV)
(W)
80
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