BLF7G20L-250P NXP Semiconductors, BLF7G20L-250P Datasheet - Page 5

• Manufacturer Part Number: BLF7G20L-250P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G20L-250P_7G20LS-250P
Product data sheet
Fig 2.
Fig 4.
PAR
(dB)
(%)
η
(1) f = 1805 MHz.
(2) f = 1845 MHz.
(3) f = 1880 MHz.
(1) f = 1805 MHz.
(2) f = 1845 MHz.
(3) f = 1880 MHz.
D
60
40
20
8
6
4
2
0
0
50
peak output power; typical values
0
Efficiency as a function of average output
power; typical values
Peak-to-average power ratio as a function of
7.3 Single carrier W-CDMA
150
100
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel
bandwidth is 3.84 MHz; channel spacing = 5 MHz; V
250
200
(1)
(2)
(3)
P
P
BLF7G20L-250P; BLF7G20LS-250P
L(AV)
L(M)
All information provided in this document is subject to legal disclaimers.
001aal942
001aal950
(W)
(W)
(1)
(2)
(3)
350
300
Rev. 3 — 1 March 2011
Fig 3.
Fig 5.
ACPR
(dBc)
(dB)
G
(1) f = 1805 MHz.
(2) f = 1845 MHz.
(3) f = 1880 MHz.
p
-20
-40
-60
5M
20
19
18
17
16
15
0
0
0
Adjacent channel power ratio (5 MHz) as a
function of average output power; typical
values
Power gain and drain efficiency as a function
of average output power; typical values
G
η
DS
D
p
40
40
= 28 V; I
(1)
(2)
(3)
Power LDMOS transistor
Dq
= 1900 mA
80
80
P
P
L(AV)
L(AV)
© NXP B.V. 2011. All rights reserved.
001aal943
001aal951
(W)
(W)
120
120
50
40
30
20
10
0
(%)
η
D
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