BLF7G20L-250P NXP Semiconductors, BLF7G20L-250P Datasheet - Page 11

• Manufacturer Part Number: BLF7G20L-250P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Handling information
10. Abbreviations
11. Revision history
Table 11.
BLF7G20L-250P_7G20LS-250P
Product data sheet
CAUTION
Document ID
BLF7G20L-250P_7G20LS-250P v.3 20110103
Modifications:
BLF7G20L-250P_7G20LS-250P v.2 20100909
BLF7G20L-250P_7G20LS-250P v.1 20091216
Revision history
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
ESD
LDMOS
LDMOST
PAR
VSWR
W-CDMA
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Abbreviations
Release
date
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•
•
•
•
•
•
•
•
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BLF7G20L-250P; BLF7G20LS-250P
All information provided in this document is subject to legal disclaimers.
Data sheet status changed from Preliminary sheet to Product data sheet
Table 1 on page
Section 1.1 on page
page 11
Table 4 on page
Table 7 on page
Section 7.2 on page
Figure 5 on page
Table 9 on page
Table 9 on page
Section 9 on page
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Objective data sheet
Data sheet status
Product data sheet
Preliminary data sheet -
Rev. 3 — 1 March 2011
1: PDPCH has been changed to DPCH
2: I
3: PDPCH has been changed to DPCH
8: title of table has been changed
8: redundant information has been removed
5: redundant conditions about frequency have been removed
11: section has been added.
D
1: caution about ESD has been moved to
4: section has been added
value has been added.
-
Change
notice
-
BLF7G20L-250P_7G20LS-250P v.2
-
Supersedes
BLF7G20L-250P_7G20LS-250P v.1
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
Section 9 on
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