BLF7G20L-250P NXP Semiconductors, BLF7G20L-250P Datasheet - Page 3

• Manufacturer Part Number: BLF7G20L-250P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G20L-250P_7G20LS-250P
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Class-AB production test circuit; PAR = 8.4 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 64 DPCH; f = 1805 MHz to 1880 MHz; RF performance at V
I
The BLF7G20L-250P and BLF7G20LS-250P are capable of withstanding a load
mismatch corresponding to a VSWR = 10 : 1 through all phases under the following
conditions: V
1880 MHz.
Symbol
Symbol Parameter
V
V
I
I
I
Symbol
P
G
R
g
R
Dq
RL

ACPR
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
p
= 25
in
= 1900 mA; T

C unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
Parameter
thermal resistance from
junction to case
Thermal characteristics
Characteristics
2-carrier W-CDMA functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
DS
BLF7G20L-250P; BLF7G20LS-250P
case
All information provided in this document is subject to legal disclaimers.
= 28 V; I
= 25

Rev. 3 — 1 March 2011
Dq
C; unless otherwise specified.
= 1900 mA; P
Conditions
T
I
Conditions
V
V
V
V
V
V
I
Dq
D
case
L(1dB)
GS
DS
GS
GS
DS
GS
DS
GS
= 5.25 A
= 1900 mA; T
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
Conditions
P
P
P
P
= 80 C; P
L(AV)
L(AV)
L(AV)
L(AV)
= 245 W (CW); f = 1805 MHz to
GS(th)
GS(th)
= 70 W
= 70 W
= 70 W
= 70 W
D
DS
D
D
= 1.5 mA
+ 3.75 V;
DS
+ 3.75 V;
= 150 mA
= 7.5 A
L
= 28 V
j
= 0 V
= 70 W; V
 150 C
Min
-
16
-
30
-
Power LDMOS transistor
DS
Min
65
1.5
-
-
-
-
-
= 28 V;
Typ
70
18
12
35
29.5
© NXP B.V. 2011. All rights reserved.
Typ
-
1.78
-
33.4
68.3
12.37 -
0.078 0.135 
DS
= 28 V;
Max
-
-
-
-
24.5 dBc
Typ
0.20
Max
-
2.3
2.8
37.54 A
-
W
Unit
dB
dB
%
Unit
K/W
3 of 14
Unit
V
V
A
nA
S