BLF6G22L-40BN NXP Semiconductors, BLF6G22L-40BN Datasheet - Page 5

• Manufacturer Part Number: BLF6G22L-40BN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G22L-40BN
Product data sheet
Fig 5.
(dB)
G
p
20
18
16
14
12
10
0
V
Power gain and drain efficiency as function of
load power; typical values
DS
= 28 V; I
G
D
p
7.4 1-Carrier W-CDMA
5
Dq
= 345 mA; f = 2140 MHz.
10
Fig 7. Peak-to-average power ratio as a function of load power; typical values
15
V
DS
= 28 V; I
20
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001aam461
P
L
(W)
Dq
PAR
= 345 mA; f = 2140 MHz.
25
Rev. 1 — 30 August 2010
50
40
30
20
10
0
8
7
6
5
4
3
(%)
0
D
5
Fig 6.
ACPR
(dBc)
10
20
30
40
50
60
70
0
V
ACPR at 5 MHz and at 10 MHz as function of
load power; typical values
DS
= 28 V; I
15
5
Dq
BLF6G22L-40BN
20
= 345 mA; f = 2140 MHz.
001aam463
P
10
L
(W)
25
Power LDMOS transistor
15
ACPR
ACPR
10M
© NXP B.V. 2010. All rights reserved.
5M
20
001aam462
P
L
(W)
25
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