BLF6G22L-40BN NXP Semiconductors, BLF6G22L-40BN Datasheet - Page 2

• Manufacturer Part Number: BLF6G22L-40BN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G22L-40BN
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
4, 5
6, 7
Type number
BLF6G22L-40BN
Symbol
V
V
V
T
T
Symbol Parameter
R
stg
j
DS
GS
GS(sense)
th(j-case)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
Connected to flange.
thermal resistance from junction to case T
Pinning
Ordering information
Limiting values
Thermal characteristics
drain
gate
source
sense drain
sense gate
Description
Parameter
drain-source voltage
gate-source voltage
sense gate-source voltage
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 1 — 30 August 2010
flanged ceramic package; 2 mounting holes; 6 leads
[1]
Conditions
case
Conditions
Simplified outline
= 80 °C; P
4
6
BLF6G22L-40BN
1
2
L
Power LDMOS transistor
= 12.5 W (CW)
5
7
3
Min
-
−0.5
−0.5
−65
-
Graphic symbol
© NXP B.V. 2010. All rights reserved.
2
200
Max
65
+13
+9
+150
1
3
Version
SOT1112A
4, 5
Typ Unit
1.7
sym126
Unit
V
V
V
°C
°C
2 of 13
6, 7
K/W