BLF6G22L-40BN NXP Semiconductors, BLF6G22L-40BN Datasheet - Page 4

• Manufacturer Part Number: BLF6G22L-40BN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G22L-40BN
Product data sheet
Fig 1.
Fig 3.
(dB)
(dB)
G
G
p
p
20
18
16
14
12
10
20
18
16
14
12
10
0
V
Power gain and drain efficiency as function of
load power; typical values
0
V
Power gain and drain efficiency as function of
load power; typical values
DS
DS
= 28 V; I
= 28 V; I
G
G
D
D
p
p
7.2 2-Carrier W-CDMA with 5 MHz carrier spacing
7.3 2-Carrier W-CDMA with 10 MHz carrier spacing
5
5
Dq
Dq
= 345 mA; f = 2140 MHz.
= 345 mA; f = 2140 MHz.
10
10
15
15
20
20
All information provided in this document is subject to legal disclaimers.
001aam457
001aam459
P
P
L
L
(W)
(W)
25
25
Rev. 1 — 30 August 2010
50
40
30
20
10
0
50
40
30
20
10
0
(%)
(%)
D
D
Fig 2.
Fig 4.
ACPR
ACPR
(dBc)
(dBc)
10
20
30
40
50
60
10
20
30
40
50
60
0
0
0
0
V
ACPR at 5 MHz and at 10 MHz as function of
load power; typical values
V
ACPR at 5 MHz and at 10 MHz as function of
load power; typical values
DS
DS
= 28 V; I
= 28 V; I
5
5
Dq
Dq
BLF6G22L-40BN
= 345 mA; f = 2140 MHz.
= 345 mA; f = 2140 MHz.
10
10
Power LDMOS transistor
15
15
ACPR
ACPR
ACPR
ACPR
© NXP B.V. 2010. All rights reserved.
20
20
10M
10M
001aam458
001aam460
5M
5M
P
P
L
L
(W)
(W)
25
25
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